2003. 3. 27 1/3 semiconductor technical data kta1834d/l epitaxial planar pnp transistor revision no : 5 features h low collector saturation voltage. : v ce(sat) =0.16v(typ.) at (i c =-4a, i b =-0.05a) h large collector current : i c =-10a(dc) i c =-15a(10ms, single pulse) h complementary to ktc5001d/l. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) note : h fe (1) classification gr:180~390. characteristic symbol rating unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -20 v emitter-base voltag v ebo -6 v collector current i c -10 a i cp -15 base current i b -2 a collector power dissipation ta=25 ? p c 1.0 w tc=25 ? 10 junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-20v - - -10 a emitter cut-off current i ebo v eb =-5v - - -10 a collector-base breakdown voltage bv cbo i c =-50 a -30 v collector-emitter breakdown voltage bv ceo i c =-1ma -20 v emitter-base breakdown voltage bv ebo i e =-50 a -6 v dc current gain h fe (1) (note) v ce =-2v, i c =-0.5a 180 - 390 h fe (2) v ce =-2v, i c =-4.0a 82 - - collector-emitter saturation voltage v ce(sat) i c =-4.0a, i b =-0.05a - -0.16 -0.25 v base-emitter saturation voltage v be(sat) i c =-4a, i b =-0.05a - -0.9 -1.2 v transition frequency f t v ce =-5v, i e =1.5a, f=50mhz - 150 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 220 - pf
2003. 3. 27 2/3 kta1834d/l revision no : 5
2003. 3. 27 3/3 kta1834d/l revision no : 5
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